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Visualization of defect-induced excitonic properties of the edges and grain boundaries in synthesized monolayer molybdenum disulfide

机译:可视化缺陷引起的边缘和边缘的激子特性   合成单层二硫化钼中的晶界

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摘要

Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDCs)are attractive materials for next generation nanoscale optoelectronicapplications. Understanding nanoscale optical behavior of the edges and grainboundaries of synthetically grown TMDCs is vital for optimizing theiroptoelectronic properties. Elucidating the nanoscale optical properties of 2Dmaterials through far-field optical microscopy requires a diffraction-limitedoptical beam diameter sub-micron in size. Here we present our experimental workon spatial photoluminescence (PL) scanning of large size ( $\geq 50$ microns)monolayer MoS$_2$ grown by chemical vapor deposition (CVD) using a diffractionlimited blue laser beam spot (wavelength 405 nm) with a beam diameter as smallas 200 nm allowing us to probe nanoscale excitonic phenomena which was notobserved before. We have found several important features: (i) there exists asub-micron width strip ($\sim 500$ nm) along the edges that fluoresces $\sim1000 \%$ brighter than the region far inside; (ii) there is another brighterwide region consisting of parallel fluorescing lines ending at the corners ofthe zig-zag peripheral edges; (iii) there is a giant blue shifted A-excitonicpeak, as large as $\sim 120$ meV, in the PL spectra from the edges. Usingdensity functional theory calculations, we attribute this giant blue shift tothe adsorption of oxygen dimers at the edges, which reduces the excitonicbinding energy. Our results not only shed light on defect-induced excitonicproperties, but also offer an attractive route to tailor optical properties atthe TMDC edges through defect engineering.
机译:原子级薄的二维(2D)过渡金属二硫化碳(TMDC)是下一代纳米级光电应用的有吸引力的材料。了解合成生长的TMDC的边缘和晶界的纳米级光学行为对于优化其光电性能至关重要。通过远场光学显微镜阐明2D材料的纳米级光学特性需要衍射限制的光束直径亚微米。在这里,我们介绍了我们的实验工作,即使用衍射受限的蓝色激光束斑(波长405 nm)通过化学气相沉积(CVD)生长的大尺寸($ geq 50 $微米)单层MoS $ _2 $的空间光致发光(PL)扫描。光束直径小至200 nm,使我们能够探究以前未曾观察到的纳米级激子现象。我们发现了几个重要的特征:(i)沿边缘存在亚微米宽度的条带($ \ sim 500 $ nm),该条带使$ \ sim1000 \%$的荧光比内部区域明亮。 (ii)还有另一个较宽的区域,由平行的荧光线组成,这些荧光线终止于之字形外围边缘的角部; (iii)从边缘的PL光谱中有一个巨大的蓝移的A-激发峰,大到$ \ sim 120 $ meV。使用密度泛函理论计算,我们将这种巨大的蓝移归因于边缘处氧二聚体的吸附,从而降低了激子结合能。我们的研究结果不仅揭示了缺陷引起的激子特性,而且还提供了一条诱人的途径,可以通过缺陷工程来调整TMDC边缘的光学特性。

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